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Corresponding author: Robert H. Schiestl, 650 Charles E. Young Dr. S., Los Angeles, CA 90095., botayde{at}mednet.ucla.edu (E-mail)
Communicating editor: P. J. PUKKILA
| ABSTRACT |
|---|
The DNA polymerase
(Pol3p/Cdc2p) allele pol3-t of Saccharomyces cerevisiae has previously been shown to increase the frequency of deletions between short repeats (several base pairs), between homeologous DNA sequences separated by long inverted repeats, and between distant short repeats, increasing the frequency of genomic deletions. We found that the pol3-t mutation increased intrachromosomal recombination events between direct DNA repeats up to 36-fold and interchromosomal recombination 14-fold. The hyperrecombination phenotype of pol3-t was partially dependent on the Rad52p function but much more so on Rad1p. However, in the double-mutant rad1
rad52
, the pol3-t mutation still increased spontaneous intrachromosomal recombination frequencies, suggesting that a Rad1p Rad52p-independent single-strand annealing pathway is involved. UV and
-rays were less potent inducers of recombination in the pol3-t mutant, indicating that Pol3p is partly involved in DNA-damage-induced recombination. In contrast, while UV- and
-ray-induced intrachromosomal recombination was almost completely abolished in the rad52 or the rad1 rad52 mutant, there was still good induction in those mutants in the pol3-t background, indicating channeling of lesions into the above-mentioned Rad1p Rad52p-independent pathway. Finally, a heterozygous pol3-t/POL3 mutant also showed an increased frequency of deletions and MMS sensitivity at the restrictive temperature, indicating that even a heterozygous polymerase
mutation might increase the frequency of genetic instability.
RECOMBINATION between repeated DNA sequences can occur in meiosis and in mitosis (![]()
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Homologous intrachromosomal recombination events between duplicated sequences resulting in deletions may occur by several different mechanisms, such as intrachromatid exchange, single-strand annealing (SSA), one-sided invasion, unequal sister chromatid exchange, or sister chromatid conversion (![]()
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1%) could be explained by this mechanism. With a different system that forced amplification of the excised circle, ![]()
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Intrachromosomal recombination leading to deletions can also be explained by recombination between sister chromatids as unequal sister chromatid exchange (SCEs) or sister chromatid conversion. Unequal SCEs give rise to a duplication of the disrupting sequence (![]()
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4% of the recombination events gave such a triplication. This suggests that the majority of events are not due to unequal SCEs.
Intrachromatid exchange, SSA, and one-sided invasion can take place in any phase of the cell cycle, including G1. SCE and sister chromatid conversion events, on the other hand, require the presence of the sister chromatid and thus they can occur in the S-phase or in G2 but not in G1. Intrachromosomal deletion recombination events are induced by a site-specific DSB in G1 and G2 to the same extent. Moreover, DNA single-strand breaks induce intrachromosomal deletion events in dividing but not in cell-cycle-arrested cells (![]()
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Several mutants with elevated spontaneous intrachromosomal recombination frequencies have been isolated in Saccharomyces cerevisiae (![]()
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, increases deletion events but not gene conversions (![]()
p, together with Pol
p and Pol
p, is an essential function and required for DNA replication. Pol
p has a primase activity and is involved in initiation of both the leading- and the lagging-strand syntheses (![]()
p and Pol
p can extend the primers formed by Pol
p (![]()
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The pol3-t mutant allele, initially isolated as tex1 mutant because it increased the rate of excision of a bacterial transposon within the yeast LYS2 gene, also increases intrachromosomal deletion recombination between short repeats of several base pairs separated by long inverted repeats (![]()
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Here we report the effect of the temperature-sensitive allele pol3-t on intrachromosomal deletion and interchromosomal recombination, reverse and forward mutation. Moreover, we studied the influence of Rad1p and Rad52p in the pol3-t background to characterize the genetic control of intrachromosomal recombination. Finally, to better understand the role of DNA polymerase
on DNA-damage-induced recombination, we also studied the effects of Rad1p and Rad52p on UV-,
-ray-, and methyl methanesulfonate (MMS)-induced intrachromosomal deletion recombination in the pol3-t background.
| MATERIALS AND METHODS |
|---|
Media, genetic, and molecular techniques:
Complete media (YPAD), synthetic complete (SC), and drop-out (SD) media were prepared according to standard procedures (![]()
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Yeast strains:
The names and genotypes of the strains of S. cerevisiae used are listed in Table 1. Because pol3-t confers a temperature-sensitive phenotype, all pol3-t strains were grown at 25° (![]()
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Strains TCY3 and TCY4, carrying a deletion from position +40 to +3211 of RAD1, were constructed by two-step gene replacement using the EcoRI-SalI fragment of plasmid pR1.6 (kindly provided by Louise Prakash; ![]()
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) were constructed by digestion of plasmid pSM22 (from David Schield and R. Mortimer via Louise Prakash) with BamHI and transformation of yeast cells with the BamHI fragment in which the BglII-ClaI fragment in the open reading frame of the RAD52 gene had been replaced by a BamHI-ClaI fragment containing the URA3 gene (![]()
Diploid strains AGY36 and AGY37, isogenic to RS112, were constructed by mating AGY30 with AGY35 and RSY6 with AGY35, respectively.
Recombination assays:
All strains used carry the same intrachromosomal recombination substrate as strain RSY6 (![]()
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10-4 (![]()
To determine the frequency of spontaneous intrachromosomal recombination, single colonies were inoculated into 5 ml of SC-LEU and incubated at 25° or 30° for 17 hr. Thereafter, cultures were washed twice and counted and appropriate numbers were plated onto SC and SC-HIS plates to determine the surviving fraction and the frequency of intrachromosomal recombination, respectively. Single colonies of the diploid strains RS112 and AGY36 were incubated as above and in addition plated onto SC-ADE plates to determine the frequency of interchromosomal gene conversion. Plates were incubated at 25° for 4 days and colonies were counted thereafter. All HIS3 and ADE2 recombinants were checked for the presence of the pol3-t allele by replica plating and incubation at 37°.
Intrachromosomal recombination was also measured following UV,
-rays, and MMS exposure. For UV exposure, single colonies were inoculated into SC-LEU at 25° for 17 hr. Thereafter, cells were washed and resuspended in fresh SC-LEU for 4 hr at 30°. Aliquots of 10 ml containing 3 x 107 cells/ml were irradiated in distilled water using a UV source at the dose rate of 3.5 erg/m2/sec. The same number of cells were exposed to
-rays using a 60Co
-ray source at 9.1 cGy/sec (![]()
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Reverse and forward mutation assay:
To measure the spontaneous frequency of reverse mutations at ilv1-92 and arg4-3, single colonies of RSY6 and AGY30 were inoculated into 5 ml YPAD and incubated for 17 hr at 25° or 30°. Then cells were washed and counted and appropriate numbers were plated onto SC, SC-ILV, and SC-ARG to score for the surviving fraction and mutants. Plates were incubated at 25° until colonies were formed.
The spontaneous frequency of forward mutation was determined as follows: single colonies of RSY6 (ARG4) and AGY30 (ARG4) were inoculated in 5 ml YPAD and incubated for 17 hr at 25° or 30°. Then cells were washed and counted and appropriate numbers were plated onto SC and SC-ARG + CAN (60 mg/liter) to score for the surviving fraction and mutants. Plates were incubated at 25° until colonies formed.
Determination of the effect of cell division on the recombination phenotype in the pol3-t mutant:
We tested the effect of cell division on the recombination phenotype of pol3-t after growth at 25° and 30°. Single colonies of AGY30 and RSY6 were grown in SC-LEU at 25° for 20 hr. Cells were washed and inoculated for 5 hr in SC-URA to achieve cell-cycle arrest at G0/G1 since they carry the ura3-52 allele (![]()
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Data comparison and statistical evaluation:
The data were compared either as fold induction compared to the control or as "change in average frequency," which indicates the number of recombination events after exposure to a certain dose of a genotoxin after subtraction of the spontaneous frequency (![]()
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| RESULTS |
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Effect of pol3-t on spontaneous mitotic recombination:
To investigate effects of pol3-t on mitotic recombination we constructed the haploid strains TCY1, TCY2, and AGY30 and the diploid strain AGY36 (Table 1). All these strains contain an intrachromosomal recombination substrate that resulted from integration of plasmid pRS6 at the HIS3 locus (see MATERIALS AND METHODS; ![]()
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Effect of the pol3-t mutation on spontaneous mutation frequencies:
Another temperature-sensitive mutant of DNA polymerase
gene CDC2, named hpr6, has been shown to have both hyperrecombination and mutator phenotypes (![]()
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Since pol3-t had a more pronounced effect on intrachromosomal recombination than on interchromosomal recombination, we decided to further focus our study on intrachromosomal recombination.
Dependence of the pol3-t hyperrecombination phenotype on DNA replication:
In yeast, mRNA transcript levels of CDC2/POL3 increase at the boundary of the G1/S phase of the cell cycle (![]()
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pol3-t strains showed a pronounced hyperrecombination phenotype following growth at the semipermissive temperature of 30°. We tested the effect of cell division on the hyperrecombination phenotype of pol3-t after growth at 25° and 30° (see MATERIALS AND METHODS). Intrachromosomal recombination was measured at the 0 time point and after 24 hr of incubation. At time 0, the frequency of intrachromosomal recombination was 2.34 ± 0.79 x 10-4 in the POL3 strain and 24.5 ± 6.6 x 10-4 in the pol3-t strain. After 24 hr at 25° in G0/G1, the frequency was 2.3 ± 0.85 x 10-4 in the POL3 strain and 16.51 ± 8.27 x 10-4 in the pol3-t strain, and after 24 hr in G0/G1 at 30°, the frequency of intrachromosomal recombination was 1.79 ± 0.77 x 10-4 in the POL3 strain and 21.69 ± 2.8 x 10-4 in the pol3-t strain. Thus, intrachromosomal recombination frequencies did not change after 24 hr of postincubation at 30° as compared to 25° in the absence of cell divisions. In contrast, recombination frequencies of pol3-t cells grown in parallel at 30° for the same amount of time were at least 2.5-fold higher than those at 25°, similar to the data in Table 2. Thus, DNA replication is most likely required for the development of the pol3-t hyperrecombination phenotype.
Effect of mutations in rad1 and rad52 on the pol3-t hyperrecombination phenotype:
The excision repair gene RAD1 is involved in intrachromosomal recombination (![]()
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, the pol3-t mutation did not significantly increase intrachromosomal recombination at 25°, while at 30° intrachromosomal recombination increased 6.5-fold (Table 4). Thus, the rad1 mutation decreased the pol3-t-mediated hyperrecombination phenotype 100-fold at 25° and 36-fold at 30°. Similar results were obtained with TCY1, TCY2, TCY3, and TCY4, another set of wild-type, pol3-t, rad1, and rad1 pol3-t strains (data not shown). Thus, the pol3-t hyperrecombination phenotype in most part is dependent on Rad1p.
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Intrachromosomal recombination is also dependent on the RAD52 gene function (![]()
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pol3-t strain AGY32, intrachromosomal recombination frequencies are 11- and 60-fold higher than those in the rad52 POL3 strain YR52-2 at 25° and 30° (Table 4). Compared to AGY30, the RAD52 wild-type pol3-t strain, the rad52
mutation decreased the intrachromosomal recombination frequency 9- and 5-fold at 25° and 30° (Table 4). Thus, the pol3-t hyperrecombination phenotype is partially dependent on Rad52p. In summary, the dependence of the pol3-t hyperrecombination phenotype on Rad1p is much greater than that on Rad52p.
The simultaneous deletion of the rad1 and rad52 genes led to a synergistic decrease in intrachromosomal recombination >100-fold in the YR1-18 POL3 strain (Table 4), which has been seen before (![]()
rad52
pol3-t, intrachromosomal recombination frequencies are 6.5- and 57-fold higher than those in YR1-18 at 25° and 30° (Table 4). Thus, the rad1 mutation, together with the rad52 mutation, decreases the pol3-t-mediated hyperrecombination phenotype 246-fold and 45-fold at 25° and 30° (Table 4). However, this is due mostly to the rad1 mutations since the rad1
rad52
pol3-t mutant showed a frequency similar to that of the rad1
pol3-t mutant. In summary, the pol3-t mutation still elevates the recombination frequency in the rad1
rad52
mutant background.
Effect of pol3-t on UV-induced intrachromosomal recombination:
Some alleles of POL3 are deficient in DNA-damage-induced mutagenesis and interchromosomal recombination (![]()
-rays, and MMS and the effects of mutations rad1 and rad52 and of the double mutation rad1 rad52 on DNA-damage-induced recombination events. Single colonies of these strains were incubated first at 25° and then for 4 hr at 30° and irradiated with UV and
-rays or exposed to MMS as described in MATERIALS AND METHODS.
UV irradiation induced a significant increase in intrachromosomal recombination at doses of 100 and 500 J/m2 in both the wild-type (RSY6) and the pol3-t (AGY30) strains (Table 5). At 500 J/m2, intrachromosomal recombination increased 4.5-fold (P < 0.01) in the wild type and 1.6-fold (P < 0.05) in the pol3-t strain (Table 5). Since the spontaneous frequency differs greatly between the two strains, it seems justified to also base the comparison on the average number of additional recombinants due to the radiation effect. At 500 J/m2, there was an average of 22 added events in the wild type compared to an average of 8 added events in the pol3-t strain. This indicates that the pol3-t strain shows a mild deficiency in UV-induced intrachromosomal recombination.
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The pol3-t mutation did not lower the survival after UV exposure of the RAD wild type and the rad1
, rad52
, and rad1
rad52
strains, suggesting that in these mutants UV-induced DNA-damage repair in the pol3-t mutant is as efficient as in the wild type (Table 5). If anything, the pol3-t mutant by itself, as well as in any of the double- and triple-mutant combinations, is slightly more UV resistant compared to the POL3 genotype. The rad1 mutant shows a dose-dependent, significant UV induction of intrachromosomal recombination starting at doses as low as 1 J/m2, regardless of the POL3 genotype. This dose is 100-fold lower than the dose resulting in significant induction in the RAD wild type. The pol3-t mutant still shows some minor defect in induced recombination since the dose of 20 J/m2 resulted in an average of 9 added recombination events in the rad1 mutant vs. an average of 3.7 added events in the rad1 pol3-t mutant (Table 5).
The rad52 mutant as well as the rad1 rad52 mutant were both completely defective in UV-induced intrachromosomal recombination. Both the RAD1 and the RAD52 pathways are involved in spontaneous recombination and the double mutant showed a synergistic decrease in spontaneous recombination, as previously found (![]()
Effect of pol3-t on
-ray-induced intrachromosomal recombination:
Irradiation with
-rays induced significant increases in intrachromosomal recombination at all doses used in both wild-type and pol3-t strains (Table 6). At 1000 Gy, intrachromosomal recombination increased 16-fold (P < 0.001) in the wild type and 3.7-fold (P < 0.05) in the pol3-t mutant (Table 6). At that dose there was an average of 37 added events in the wild type and an average of 23 added events in the pol3-t mutant, which is somewhat less in the mutant but rather similar.
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In the rad1
strain,
-ray exposure elevated recombination frequencies in a dose-dependent manner without any effect of pol3-t, while exposure resulted in a very moderate increase only at the highest dose in the rad52
and no significant induction in the rad1
rad52
strain (Table 6). Interestingly, as for UV-induced recombination in both backgrounds, in the pol3-t mutant there was significant induction at higher doses. In the rad52
pol3-t mutant, there was an average of 2.3 added events at a dose of 50 Gy vs. an average of 0.2 added events in the rad52 mutant. Similarly, in the rad1
rad52
pol3-t mutant at the same dose, there was an average of 0.32 added events vs. an average of 0.022 added events in the rad1
rad52
strain.
Effect of pol3-t on MMS-induced intrachromosomal recombination:
At higher doses of MMS the pol3-t mutation in the RAD wild type, the rad1
, and, to a lesser extent, the rad52
backgrounds were much more sensitive, which is in agreement with ![]()
4050% viability in the POL3 wild-type strain. In the RAD wild-type strain, exposure to 500 µg/ml MMS resulted in 48% viability with a 60-fold lower viability in the pol3-t strain. In comparison, 200 µg/ml MMS exposure in the rad1
strain had a viability of 36% compared to a 6-fold lower viability in the rad1
pol3-t strain. At a dose of 50 µg/ml MMS, the rad52
strain had a viability of 54% compared to a 7-fold lower viability in the rad52
pol3-t strain. Finally, at a dose of 1 µg/ml MMS, the rad1
rad52
strain had a viability of 39% compared to an
3-fold higher viability in the rad1
rad52
pol3-t strain. Thus, the pol3-t-mediated MMS sensitivity was diminished in both the rad1 and the rad52 background and absent in the rad1 rad52 background.
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At the lowest dose of MMS (10 µg/ml), intrachromosomal recombination increased 2-fold (P < 0.01) in the wild type while no increase was seen in the pol3-t mutant (Table 7). At equitoxic doses at the same survival level of 4050%, at a dose of 500 µg/ml in the wild type and of 200 µg/ml in the pol3-t mutant, MMS increased intrachromosomal recombination 24-fold (P < 0.001) in the wild type and 3.5-fold (nonsignificant) in the pol3-t mutant. At these doses, there was an average of 98 added events in the wild type and an average of 43 added events in the pol3-t mutant. This would allow the conclusion that for all three DNA-damaging agents, the results indicate that the level of DNA-damage-induced recombination is lower in the pol3-t mutant than in the RAD wild type, indicating that Pol3p is partially responsible for DNA-damage-induced intrachromosomal recombination. If, however, the same dose rather than equitoxic doses of MMS is evaluated, there is an equal level of induction of intrachromosomal recombination in the pol3-t mutant.
In the rad1
, rad52
, and rad1
rad52
double-mutant background, MMS induced recombination at all doses regardless of the POL3 status (Table 7). However, again as for UV- and
-ray-induced recombination, in both backgrounds the pol3-t mutant showed higher inducibility. At a dose of 100 µg/ml MMS, there was an average of 27.7 added events in the rad52
pol3-t strain compared to an average of 1.1 added events in the rad52
strain. At the same dose in the rad1
rad52
pol3-t strain, there were
5 induced events compared to 0.24 induced events for the rad1
rad52
strain (Table 7).
Effect of rad1 and rad52 mutations on the temperature-sensitive phenotype of pol3-t:
Since the rad1 and rad52 mutations partially reduced the hyperrecombination phenotype of the pol3-t mutant, we determined the effect of mutations in these DNA repair pathways on the temperature-sensitive phenotype of pol3-t. The pol3-t mutant and all combinations of double and triple mutants were incubated at the restrictive temperature, and viability was determined after different time points up to 8 hr. After 1 hr, the cells were already arrested and did not grow further. The control POL3 rad mutants were incubated in the same way but kept dividing rapidly at 37°. Thus, the viability must have been high in these strains. After 8 hr, the pol3-t mutant had 0.4% viable cells. At all time points the survival of the double and triple mutants was lower than that of the pol3-t single mutant and at almost all time points starting at the 2-hr point this difference was significant (Table 8). This indicates that both the Rad1p and the Rad52p pathway are partially involved in the repair of lethal DNA lesions in the pol3-t strain at the restrictive temperature.
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Effect of pol3-t heterozygosity on recombination and MMS sensitivity:
A decrease in the expression of POL3 under the GAL1 promoter is sufficient to cause a mutator phenotype and MMS sensitivity (![]()
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| DISCUSSION |
|---|
In this study, we found that the pol3-t allele of the POL3/CDC2 gene of S. cerevisiae, which encodes the catalytic subunit of the DNA polymerase
, increased intra- and interchromosomal recombination in a diploid and intrachromosomal recombination in two haploid strains. Previous studies reported that mutations in POL3/CDC2 genes increased intrachromosomal recombination between homologous and homeologous DNA sequences (![]()
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Moreover, we found that pol3-t increased both reverse and forward mutation frequencies. Most interestingly, the pol3-01 mutant has abnormal cell-cycle progression due to activation of the S-phase checkpoint, and inactivation of the S-phase checkpoint suppressed the cell-cycle progression defect as well as the mutator phenotype (![]()
The pol3-t-mediated hyperrecombination phenotype requires DNA replication:
To determine whether cell division and/or DNA replication affect the hyperrecombination phenotype, we monitored intrachromosomal recombination during a prolonged G1 arrest. The frequency of intrachromosomal recombination did not change during the cell-cycle arrest and did not increase in G1-arrested cells at 30°. Thus, cell division or DNA replication is necessary to increase recombination in pol3-t strains.
Intrachromosomal recombination events leading to deletions are due mainly to DNA DSBs (![]()
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The hyperrecombination phenotype in pol3-t strains depends partially on Rad52p but much more so on Rad1p:
Intrachromosomal recombination events leading to deletions between repeated sequences can occur by several mechanisms: by recombination between the two repeats within one chromatid as intrachromatid exchange; by SSA; by one-sided invasion events; or, alternatively, by recombination between sister chromatids as unequal sister chromatid exchange or sister chromatid conversion (![]()
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Deletion of RAD1 and RAD52 greatly reduces the frequencies of intrachromosomal deletion events between repeats (![]()
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SSA, one of the mechanisms for the deletion recombination events, requires Rad1p and Rad10p if the distance between interacting repeats is >60 bp (![]()
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The low level of recombination went up significantly in the rad52 mutant in the presence of the pol3-t mutation. In addition, ionizing radiation induced recombination to much higher levels in the pol3-t rad52 double mutant than in the rad52 single mutant. This indicates that pol3-t channels lesions into a Rad52p-independent pathway, like the Rad1p pathway.
Most of the pol3-t-induced recombination events were dependent on Rad1p or Rad52p; however, the pol3-t mutation still increased the frequency in the absence of Rad1p and Rad52p. Other hyperrecombination phenotypes differ in their dependence on the Rad1p- and/or Rad52p-mediated pathways. A mutation in hpr1 increases recombination between DNA repeats up to 2000-fold (![]()
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rad52
double-deletion mutant strain, the rfa1-D228Y mutant has been found to stimulate intrachromosomal deletion events between repeats up to the wild-type level (![]()
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rad52
pol3-t strain may occur by a Rad1p Rad52p-independent SSA mechanism.
Genetic control of DNA-damage-induced intrachromosomal recombination in strains of different POL3 status:
The pol3-t mutant was slightly more UV resistant in all genotypes compared to the POL3 wild type. This might be due to the somewhat longer time available to repair the lesions by excision repair in the pol3-t mutant since the cells grew at 30° for 4 hr prior to UV exposure. There was no such difference in survival for
-rays or MMS. The pol3-t mutant was MMS sensitive as previously reported for other pol3 mutants (![]()
The pol3-t strain was partially defective in UV- and
-ray-induced intrachromosomal recombination in agreement with findings by others (![]()
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is required for both DNA replication and base excision repair (![]()
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in the DNA DSB repair and DSB-induced mitotic gene conversion has been reported (![]()
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DNA-damage-induced intrachromosomal deletion recombination events are under different genetic control than spontaneous events, suggesting a difference in mechanism. UV and
-rays induced recombination in the rad1
strain, but not at all or very little in the rad52
and the rad1
rad52
strains. This demonstrated that UV- and
-ray-induced intrachromosomal recombination required Rad52p but not Rad1p in a POL3 background, whereas spontaneous recombination is dependent on both Rad1p and Rad52p functions (![]()
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-ray-induced intrachromosomal recombination was Rad52p independent. Both pathways of hyperrecombination potentially operable in the pol3-t strain, involving DSB formation on a single-strand break or gap template as well as invasion of homologous DNA by long stretches of single-strand DNA on the lagging-strand template, could be more prevalent after additional DNA damage. As much of the pol3-t hyperrecombination pathway was independent of Rad52p so was the UV- or
-ray-induced recombination in the pol3-t mutant.
Pol3-t heterozygosity results in hyperrecombination and MMS-sensitive phenotypes:
Our data indicate that pol3-t/POL3 heterozygosity significantly increased the recombination frequency in both systems as well as the MMS sensitivity at the restrictive temperature. This could be due to the fact that the pol3-t allele may have some dominant effect, such as binding to a multi-enzyme complex as an inactive component, or that just a lower level of Pol3p leads to the recombinagenic effect. Since a lower level of Pol3p obtained by repressing the gene under the GAL1 promoter resulted in a mutator as well as in an MMS-sensitive phenotype (![]()
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even in a heterozygous combination might increase the frequency of genetic instability, which might be a risk factor for cancer.
| ACKNOWLEDGMENTS |
|---|
This research was supported by Research Career Development award no. ES00299 from the National Institutes of Health to R.H.S.
Manuscript received June 12, 2002; Accepted for publication January 15, 2003.
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